Selective Deposition of Copper with Iodine Assisted Growth of MOCVD on an MPTMS Monolayer Surface at a Low Temperature

We have investigated the selective deposition of Cu films on the mercaptopropyltrimethoxysilane-ocatadecyltrichlorosilane patterned glass substrate using Cu(DMB) and C2H5I as precursors at 110°C

Mohammad Arifur Rahman

2010

Key concepts

Scholarcy highlights

  • We have investigated the selective deposition of Cu films on the mercaptopropyltrimethoxysilane-ocatadecyltrichlorosilane patterned glass substrate usingCu(DMB) and C2H5I as precursors at 110°C
  • The low temperature deposition of Cu without iodine exhibited the difficulties of Cu nucleation on MPTMS with its low Cu growth rate of 22 nm/min and long induction period of approximately 4 min at 110°C
  • The addition of iodine significantly enhanced the surface diffusion of Cu adatoms on the MPTMS surface and led to increased nucleation and growth rate at 110°C
  • We successfully increased the maximum thickness of Cu selectively deposited on the MPTMS patterned lines from 57 nm to 140 nm without selectivity loss by adding iodine toCu(DMB)(3,3-dymethyl-1-butene) at 110°C
  • The low temperature process for the selective deposition of Cu on the MPTMSOTS patterned surface can be utilized for the fabrication of flexible electronics

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