Tunnelling Current Measurements Using Current Sensing Atomic Force Microscope

The analysis suggested that the barrier height was about 1.22 eV

Arup Sarkar


Scholarcy highlights

  • There are different models such as hopping, tunnelling via superexchange, sequential tunnelling, flickering resonance model and so forth to describe the charge transport. When we have metal-insulator-metal type of junctions, to analyse the charge transport through these junctions, Simmons’ equation has been a successful approach
  • Understanding the charge transport through tunnelling junctions is relevant for successful molecular electronic devices
  • Direct tunnelling is a kind of non-resonant tunnelling
  • A transition was found from direct tunnelling to field emission at applied bias voltage for few π conjugated thiols
  • They have shown that gold-molecule-gold junctions formed of π-conjugated thiols gives current-voltage characteristic in accordance with a transition of a trapezoidal barrier to a triangular barrier at moderate applied bias voltage
  • Simmons equation was employed for the analysis and extraction of parameters like effective mass and barrier height which are useful for the tunnelling device applications
  • It was explained that how molecular resonant tunnelling can lead to negative differential resistance in ultrathin film of MPc. At the end, it can be envisioned that the knowledge of tunnelling current will be very useful for the miniaturised device applications

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