Design and Fabrication of GaAs Based MOSFET by Physical Vapor Deposition Method

This paper investigates the current–voltage performance of FET where III–V GaAs as channel

Arkilang Challam; Cyril Robinson Azariah John Chelliah; D. Nirmal; Rajesh Swaminathan

2018

Scholarcy highlights

  • This paper investigates the current–voltage performance of FET where III–V GaAs as channel
  • The responsibility for the publication content rests with the publishers providing the material
  • Please refer to our Terms and Conditions

Need more features? Save interactive summary cards to your Scholarcy Library.