Molecular level fabrication techniques and molecular electronic devices

Another object of this paper is to review briefty recent developments given at the 2nd International Workshop on Molecular Electronic Devices, abbreviated WMED2,3A and can particular attention to new con~ cepts applicable to molecular fabrication

Forrest L. Carter

2002

Scholarcy highlights

  • If one extrapolates gains in transistor size reduction into the future, it is readily anticipated that electronic switches will be at the molecular size level, i.e., 20-200 A in 20-30 years
  • While molecular level fabrication techniques are a clear necessity for the development of processors and sensors based on Molecular Electronic Devices, it is a pri~ mary object of this discussion to suggest their importance in possible future developments in semiconductor lithographic techniques. Another object of this paper is to review briefty recent developments given at the 2nd International Workshop on Molecular Electronic Devices, abbreviated WMED2,3A and can particular attention to new con~ cepts applicable to molecular fabrication
  • Forrest l., Carter: Molecular level fabrication techniques In Fig. 7 a radical soliton traveling from left to right is schematically indicated
  • While the recognized need to control the morphology and organization of molecular electronic devices provided the initial impetus for the above considerations, we hope that this paper has been of heuristic value in regard to rich possibilities for fabricating useful structures at the nanometer and molecular size level
  • A quick partial listing of the topics covered, Merrifield synthesis, modulated structures, electron tunnelling, nuraminidase, L-B films, fiberelectronics, fracials, and monolayer polymerization is enough to suggest that future fabrication techniques will not be a respecter of the boundaries of traditional disciplines

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