Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

We studied both sub-10nm GNRs and wide GNRs

Xinran Wang; Yijian Ouyang; Xiaolin Li; Hailiang Wang; Jing Guo; Hongjie Dai

2008

Scholarcy highlights

  • Sub-10nm wide graphene nanoribbon field-effect transistors are studied systematically
  • Sub-10nm GNR was predicted to be semiconducting by several theories, experimental work in this area has been scarce partly due to challenges in patterning GNR below 20nm by plasma etching
  • Various fundamental questions remain to be addressed such as the performance limit of GNRFETs, the intrinsic carrier mobility in narrow ribbons and comparison of GNRs with other materials including carbon nanotubes. We studied both sub-10nm GNRs and wide GNRs
  • The on-state resistance in GNR due to scattering can be written as where L is channel lengths, λ is total scattering mfp and λedge, λap, λdefect denote mfp due to GNR edge, acoustic phonon and defect scattering, respectively
  • We analyze how close the GNRFET operates to the ballistic performance limits by comparing experiments with theoretical modelling
  • Our sub-10nm GNRFETs afford all-semiconducting nano-scale transistors that are comparable in performance to small diameter carbon nanotube devices
  • Future work should focus on elucidating the atomic structures of the edges of our GNRs and correlate with the performances of graphene nanoribbon field-effect transistors. The integration of ultra thin high-κ dielectrics and more aggressive channel length scaling is needed to achieve better electrostatics, higher Ion and ideal subthreshold slope

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