Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%

The compositional dependence of the fundamental bandgap of pseudomorphic GaAs1−xBix layers on GaAs substrates is studied at room temperature by optical transmission and photoluminescence spectroscopies

M. Masnadi-Shirazi; R. B. Lewis; V. Bahrami-Yekta; T. Tiedje; M. Chicoine; P. Servati

2014

Scholarcy highlights

  • The compositional dependence of the fundamental bandgap of pseudomorphic GaAs1−xBix layers on GaAs substrates is studied at room temperature by optical transmission and photoluminescence spectroscopies
  • All GaAs1−xBix films show direct optical bandgaps, which decrease with increasing Bi content, closely following density functional theory predictions
  • The GaAs1−xBixbandgap, exponential absorption band tails are observed with Urbach energies 3–6 times larger than that of bulk GaAs
  • The Urbach parameter increases with Bi content up to 5.5% Bi, and remains constant at higher concentrations
  • The authors thank Lucas Chrostowski for generously allowing us to use his equipment

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