Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear

2006

Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear

2006

- Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltagecharacteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear
- These I-Vcharacteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias
- Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3nanowires