Current-voltage characteristics and parameter retrieval of semiconducting nanowires

Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear

Z. Y. Zhang; C. H. Jin; X. L. Liang; Q. Chen; L.-M. Peng

2006

Scholarcy highlights

  • Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltagecharacteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear
  • These I-Vcharacteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias
  • Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3nanowires

Need more features? Save interactive summary cards to your Scholarcy Library.