Graphene–Si CMOS oscillators

We introduce graphene in Si complementary metal–oxide-semiconductor circuits to exploit favorable electronic properties of both technologies and realize a new class of simple oscillators using only a Graphene field-effect transistors, Si CMOS D latch, and timing RC circuit

Carlo Gilardi; Paolo Pedrinazzi; Kishan Ashokbhai Patel; Luca Anzi; Birong Luo; Timothy J. Booth; Peter Bøggild; Roman Sordan


Scholarcy highlights

  • The development of graphene electronic circuits is mostly guided by the state-of-the-art circuit design of Si transistor technology
  • Top-gated Graphene field-effect transistors were fabricated from graphene grown by chemical vapor deposition and transferred to
  • The ambipolarity of graphene is reflected in the transfer curves of GFETs in which the same channel resistance is obtained at two different gate voltages
  • In the bow tie oscillator, the duty cycle increased with VBG, as the capacitor was charged in the low state rather than in the high state as with the parabolic oscillator
  • We exploited the symmetry of the transfer characteristics of GFETs to realize a new class of very simple electronic relaxation oscillators comprising a GFET, Si complementary metal–oxide-semiconductor latch, and RC timing circuit
  • The switching and large voltage swing of generated waveforms were provided by Si CMOS logic
  • The introduction of graphene in Si complementary metal–oxide-semiconductor logic may prove to be a feasible approach in simplifying it and providing additional functionality while at the same time overcoming barriers to entry of graphene in electronics

Need more features? Save interactive summary cards to your Scholarcy Library.