Graphene–Si CMOS oscillators

We introduce graphene in Si complementary metal–oxide-semiconductor circuits to exploit favorable electronic properties of both technologies and realize a new class of simple oscillators using only a Graphene field-effect transistors, Si CMOS D latch, and timing RC circuit

Carlo Gilardi; Paolo Pedrinazzi; Kishan Ashokbhai Patel; Luca Anzi; Birong Luo; Timothy J. Booth; Peter Bøggild; Roman Sordan

2019

Scholarcy highlights

  • The development of graphene electronic circuits is mostly guided by the state-of-the-art circuit design of Si transistor technology
  • Top-gated Graphene field-effect transistors were fabricated from graphene grown by chemical vapor deposition and transferred to
  • The ambipolarity of graphene is reflected in the transfer curves of GFETs in which the same channel resistance is obtained at two different gate voltages
  • In the bow tie oscillator, the duty cycle increased with VBG, as the capacitor was charged in the low state rather than in the high state as with the parabolic oscillator
  • We exploited the symmetry of the transfer characteristics of GFETs to realize a new class of very simple electronic relaxation oscillators comprising a GFET, Si complementary metal–oxide-semiconductor latch, and RC timing circuit
  • The switching and large voltage swing of generated waveforms were provided by Si CMOS logic
  • The introduction of graphene in Si complementary metal–oxide-semiconductor logic may prove to be a feasible approach in simplifying it and providing additional functionality while at the same time overcoming barriers to entry of graphene in electronics

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