Ballistic carbon nanotube field-effect transistors

We show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes

Ali Javey; Jing Guo; Qian Wang; Mark Lundstrom; Hongjie Dai

2003

Scholarcy highlights

  • A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube–metal junctions1,2,3
  • We show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes
  • Tersoff for insights and sharing preprints/unpublished results, and D

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