Making Graphene Luminescent by Oxygen Plasma Treatment

We show that strong photoluminescence can be induced in single-layer graphene using an oxygen plasma treatment

T. Gokus


Scholarcy highlights

  • Graphene samples are produced by microcleavage of graphite on a silicon substrate covered with 100 nm SiO2.1 The number of layers is determined by a combination of optical microscopy and Raman spectroscopy
  • A broad PL background is evident in Figure 2a for treatment times above 2 s. This is different from the case of the hydrogen plasma treated samples of ref 15, where no luminescence was observed for the same excitation and detection energy range
  • We have shown that spatially uniform PL can be induced in single-layer graphene on substrates by selective plasma oxidation
  • The resulting photoluminescent material could pave the way toward graphene-based optoelectronics
  • The D peak is due to the breathing modes of sp rings and requires a defect for its activation. It comes from TO phonons around K,24,25 is active by double resonance, and is strongly dispersive with excitation energy due to a Kohn Anomaly at K.37
  • Since the D peak requires the presence of six-fold rings, when the network starts losing them, I(D) decreases with decreasing La. In this case, I(D)/I(G) ϭ C=(␭)La2, with C=(514.5 nm) ϳ 0.55 nmϪ2.24 This is a very simple picture, which has proven effective to compare graphitic samples for increasing disorder. we note that a complete theory for the D and G Raman intensity and their dependence on the number of defects is still lacking

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