Extreme Monolayer-Selectivity of Hydrogen-Plasma Reactions with Graphene

We study the effect of remote hydrogen plasma on graphene deposited on SiO2

Georgi Diankov; Michael Neumann; David Goldhaber-Gordon

2013

Scholarcy highlights

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  • We study the effect of remote hydrogen plasma on graphene deposited on SiO2
  • The etch rate displays a pronounced dependence on sample temperature for monolayer and multilayer graphene alike: very slow at room temperature, peaking at 400 °C and suppressed entirely at 700 °C
  • Applying the same hydrogen plasma treatment to graphene deposited on the much smoother substrate mica leads to very similar phenomenology as on the rougher SiO2, suggesting that a factor other than substrate roughness controls the reactivity of monolayer graphene with hydrogen plasma species
  • Further examples of the reaction of monolayer graphene with hydrogen plasma at 500 °C; localization of the Raman D-band on the edges of etch pits and sheets; evidence of the involvement of the SiO2 substrate in the reaction
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