Sub-10 nm Carbon Nanotube Transistor

We demonstrate the first sub-10 nm carbon nanotube transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density at a low operating voltage of 0.5 V

Aaron D. Franklin; Mathieu Luisier; Shu-Jen Han; George Tulevski; Chris M. Breslin; Lynne Gignac; Mark S. Lundstrom; Wilfried Haensch

2012

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  • Carbon nanotube transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths
  • We demonstrate the first sub-10 nm carbon nanotube transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density at a low operating voltage of 0.5 V
  • Numerical simulations show the critical role of the metal–CNT contacts in determining the performance of sub-10 nm channel length transistors, signifying the need for more accurate theoretical modeling of transport between the metal and nanotube
  • The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies
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