Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

We show that semiconducting carbon nanotubes represent the first exception in affording nearly ballistic transistors with high-κ dielectrics, opening the door to ultra-fast electronics since both ballistic transport and high-κ dielectrics facilitate high ON-current that is directly proportional to the speed of a transistor

Ali Javey; Jing Guo; Damon B. Farmer; Qian Wang; Erhan Yenilmez; Roy G. Gordon; Mark Lundstrom; Hongjie Dai

2004

Scholarcy highlights

  • Single-walled carbon nanotubes have provided researchers with excellent model systems for elucidating fundamental properties of quasi one-dimensional materials, and triggered interesting questions such as what the ultimate 1D electronics might be.1-8 Ballistic transport, a desired property for high performance electronics, has been demonstrated for SWNTs in the low bias regime9-13 but remains unclear whether it can be achieved in high-bias operations of nanotube transistors, especially in real devices for which potentially damaging processes such as dielectric deposition become indispensable
  • We show that semiconducting carbon nanotubes represent the first exception in affording nearly ballistic transistors with high-κ dielectrics, opening the door to ultra-fast electronics since both ballistic transport and high-κ dielectrics facilitate high ON-current that is directly proportional to the speed of a transistor
  • We demonstrate ultra-short molecular transistors with self-aligned S, D and G structures that once represented an important milestone17 for CMOS technology
  • Our devices consist of L~50 nm long SWNTs between palladium S and D contacts, 8 nm thick HfO2 high-κ gate insulator formed on top of SWNTs by atomic layer deposition at 90 oC18 and top Al gate electrodes
  • The first was the development of Atomic layer deposited at 90 oC18 allowing for deposition of high-κ films on substrates patterned with a polymer-resist PMMA.19
  • The nearballistic transistors suggest that deposition of high-κ dielectric films does not harm the room temperature electrical characteristics of SWNTs
  • (12) Javey, A.; Guo, J.; Paulsson, M.; Wang, Q.; Mann, D.; Lundstrom, M.; Dai, H

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