Surface-Energy Engineering of Graphene

We investigate the wettability of graphene on SiC by contact angle measurements

Young Jun Shin; Yingying Wang; Han Huang; Gopinadhan Kalon; Andrew Thye Shen Wee; Zexiang Shen; Charanjit Singh Bhatia; Hyunsoo Yang

2010

Scholarcy highlights

  • Graphene has attracted much attention due to its superior characteristics such as very high mobility and massless Dirac fermions character. Due to its exceptional properties, wide applications have been investigated including field effect transistors and logic devices. Recently a few methods for synthesizing large area graphene, an important step towards electronic applications, were proposed making graphene a promising material for post silicon era
  • In order to fabricate useful devices, understanding the surface property of graphene is very important since the contact deposition is critical for the device performance and functionality and the contact deposition often fails due to graphene’s hydrophobic nature
  • By treating graphene with oxygen plasma, disorder or defect was introduced on graphene and the level of disorder was determined by Raman spectroscopy
  • In order to investigate the difference of wettability between epitaxial graphene and disordered graphene, we introduced damage and defects intentionally by oxygen plasma treatment
  • When the plasma power is relatively small and the exposure time is less than 1 minute, no detectable defect is present in graphene from the Raman and atomic force microscopy measurements
  • For mechanically cleaved graphene when exposure time has reached 30 seconds, the D band started rising significantly. This method to control wettability can be combined with the annealing process, which can cure any damage induced by oxygen plasma, providing good contact adhesion without compromising the physical properties

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