General Synthetic Route to High-Quality Colloidal III–V Semiconductor Quantum Dots Based on Pnictogen Chlorides

On the basis of structural, analytical, optical, and electrical characterization of the quantum dots and their thin-film assemblies, we study the effects of alloying on their particle formation and optoelectronic properties

Tianshuo Zhao; Nuri Oh; Davit Jishkariani; Mingliang Zhang; Han Wang; Na Li; Jennifer D. Lee; Chenjie Zeng; Manisha Muduli; Hak-Jong Choi; Dong Su; Christopher B. Murray; Cherie R. Kagan

2019

Scholarcy highlights

  • The synthesis of colloidal III–V quantum dots, of the arsenides and antimonides, has been limited by the lack of stable and available group V precursors
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  • On the basis of structural, analytical, optical, and electrical characterization of the QDs and their thin-film assemblies, we study the effects of alloying on their particle formation and optoelectronic properties
  • We introduce a hydrazine-free hybrid ligand-exchange process to improve carrier transport in III–V QD thin films and realize InAs QD field-effect transistors with electron mobility > 5 cm2/(V s)
  • We demonstrate that III–V QD thin films are promising candidate materials for infrared devices and show InAs1–xSbx QD photoconductors with superior short-wavelength infrared photoresponse than those of the binary QD devices
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