One-Dimensional van der Waals Heterojunction Diode

We demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction

Ya Feng; Henan Li; Taiki Inoue; Shohei Chiashi; Slava V. Rotkin; Rong Xiang; Shigeo Maruyama


Scholarcy highlights

  • Semiconductor p-n junctions are fundamental to build up state of art optoelectronic architectures
  • We propose a radial semiconductor-insulator-semiconductor heterojunction with 1D heterostructure composed of coaxial single-walled carbon nanotube, boron nitride nanotube, and MoS2NT
  • We can draw a conclusion that the relatively brighter parts in scanning electron microscope images surfaced after the second and third chemical vapor deposition processes on the suspended heterostructure nanotube can be attributed to the successful coating of BNNT and/or MoS2NT van der Waals layers
  • When a forward bias is executed on the heterostructure device, which refers to a positive polarity on SWCNT side while negative polarity on MoS2NT side, as demonstrated in Fig. 5(c), majority carriers from both sides of insulator are rapidly accumulating at the interface driven by potential and flattening the initial band bending if there is; with the increase of bias, the accumulated carriers swiftly tunnel through the insulting layer and lead to a raising current
  • Micrometer-long coaxial van der Waals heterostructure nanotube composed of SWCNT, BNNT, and MoS2NT has been synthesized
  • Without any intentional interference, semiconducting SWCNT demonstrates p-type characteristics with conventional noble metal contacts, while MoS2NT behaves like n-type semiconductor
  • Schematics of fabrication processes, scanning electron microscope images of as-grown and transferred heterostructure nanotubes, full Raman spectrum of suspended heterostructure nanotube, sSNOM scan images at 26 different IR frequencies, electrical measurements of referential single-walled carbon nanotube device, and PL of suspended heterostructure nanotube

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