Hf-Contacted High-Performance Air-Stable n-Type Carbon Nanotube Transistors

We have demonstrated air-stable n-type single-walled carbon nanotube -based field-effect transistors with hafnium contacts

Xiaohui Liu; Zhiqiang Wu; Delin Hong; Weifeng Wu; Chenqiao Xue; Xiang Cai; Sujuan Ding; Fenfa Yao; Chuanhong Jin; Sheng Wang

2021

Scholarcy highlights

  • The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online
  • We have demonstrated air-stable n-type single-walled carbon nanotube-based field-effect transistors with hafnium contacts
  • We characterize the oxidization properties of the Hf electrode in ambient air and find that a thin oxidized layer is formed on the electrode, which indicates the self-limiting nature of the oxide
  • Our work indicates that Hf contacts have the potential to be used in future carbon-based electronics and photoelectronics
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