Hf-Contacted High-Performance Air-Stable n-Type Carbon Nanotube Transistors
We have demonstrated air-stable n-type single-walled carbon nanotube -based field-effect transistors with hafnium contacts
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We have demonstrated air-stable n-type single-walled carbon nanotube-based field-effect transistors with hafnium contacts
We characterize the oxidization properties of the Hf electrode in ambient air and find that a thin oxidized layer is formed on the electrode, which indicates the self-limiting nature of the oxide
Our work indicates that Hf contacts have the potential to be used in future carbon-based electronics and photoelectronics
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