Impossibility of increasing Néel temperature in zigzag graphene nanoribbon by electric field and carrier doping

We investigated the dependence of Neel temperature as a critical temperature on the electric field and hole-electron doping in the antiferromagnetically ordered zigzag graphene nanoribbon

Teguh Budi Prayitno


Scholarcy highlights

  • Exploring the electric and magnetic properties in the low-dimensional materials gives significant impacts in the condensed matter subject
  • The purpose of this paper is to investigate the influence of the Neel temperature as a critical temperature of zigzag graphene nanoribbons with respect to the electric field and hole-electron doping based on the spin-waves excitations within frozen magnon method
  • We divide this section into two subsections exploring the influence of electric field and hole-electron doping on the ZGNR
  • When the transverse electric field is applied along the ribbon width, the half-metallic feature is induced
  • Even though this feature is very useful for developing spintronic devices, we prove that the ZGNR-based applicable devices cannot operate well at room temperature since the Neel temperature reduces due to transverse electric field
  • We have performed the self-consistent non-collinear spiral calculations to investigate the effect of Neel temperature TC in ZGNR under the electric field E and the hole-electron doping x
  • Based on the results, introducing E and x never gives the TC close to the room temperature

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