High electrostrictive strain in lead-free relaxors near the morphotropic phase boundary

We develop a relaxor with a morphotropic phase boundary by doping a rhombohedral ferroelectric BaZr0.2Ti0.8O3 into a tetragonal ferroelectric 0.89Bi0.5Na0.5TiO3-0.11BaTiO3

Tangyuan Li; Chang Liu; Xiaoqin Ke; Xiao Liu; Liqiang He; Peng Shi; Xiaobing Ren; Yunzhi Wang; Xiaojie Lou

2019

Scholarcy highlights

  • Thanks to its small hysteresis, large electrostrictive strain in relaxor ferroelectrics is superior than piezoelectric strain for applications in precision microactuators
  • Relaxor ferroelectrics exhibit the largest electrostrictive strain in ceramics, the magnitude of the strain is limited to ∼0.20% at room temperature due to the large amount of non-ferroelectric defects existing in relaxors
  • We develop a relaxor with a morphotropic phase boundary by doping a rhombohedral ferroelectric BaZr0.2Ti0.8O3 into a tetragonal ferroelectric 0.89Bi0.5Na0.5TiO3-0.11BaTiO3
  • A high electrostrictive strain of 0.27% is achieved at room temperature in the relaxor sample
  • Phase field simulations show that the high electrostrictive strain obtained at this composition originates from the low defect fields needed to induce relaxor as a result of small polarization anisotropy at the phase boundary as compared to conventional relaxors away from phase boundaries
  • Our work provides a new design strategy for the generation of high-performance ferroelectric relaxors

Need more features? Save interactive summary cards to your Scholarcy Library.