Schottky diodes fabricated with Langmuir—Blodgett films of C60-doped poly(3-alkylthiophene)s

By dispersing poly(3-alkylthiophene)s with surface-active materials such as arachidic acid, three P3AT—AA—C60 mixed systems were fabricated into Y-type Langmuir—Blodgett films through the vertical dipping method with a transfer ratio close to unity

Yunqi Liu

2002

Scholarcy highlights

  • By dispersing poly(3-alkylthiophene)s with surface-active materials such as arachidic acid, three P3AT—AA—C60 mixed systems were fabricated into Y-type Langmuir—Blodgett films through the vertical dipping method with a transfer ratio close to unity
  • The LB films possess a well-layered structure, which was proved by small-angle X-ray diffraction patterns
  • It was found that P3ATs became semiconductors after doping with C60 and the model diodes exhibited a rectification effect
  • The electronic parameters were found to be strongly dependent on the alkyl side chain length of P3AT molecules

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