Boron-doping effect on the super-high density Si quantum dot thin films utilizing a gradient Si-rich oxide multilayer structure

Our results show the feasibility and great potential for high efficiency Si-based solar cells integrating Si quantum dots by properly doped B atoms in gradient Si-rich oxide multilayer thin film structure

Pin-Ruei Huang; You-Cheng Chen; Kuang-Yang Kuo; Po-Tsung Lee

2019

Key concepts

Scholarcy highlights

  • Boron doping effect on crystalline, optical, and electrical properties of Si quantum dots thin films are investigated
  • Boron-doped Si QD thin films utilizing gradient Si-rich oxide multilayer structure are demonstrated by co-sputtering method
  • Further increasing the doping concentration leads to increased inactive B atoms and interfacial over-diffusion
  • Our results show the feasibility and great potential for high efficiency Si-based solar cells integrating Si QDs by properly doped B atoms in GSRO-ML thin film structure
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