Graphene quantum dots with nitrogen and oxygen derived from simultaneous reaction of solvent as exfoliant and dopant

Addition of NO-Graphene quantum dots shows a 36.2% increase in the power conversion efficiency

Gil-Seong Kang; Sungho Lee; Jun-Seok Yeo; Eun-Su Choi; Doh C. Lee; Seok-In Na; Han-Ik Joh

2019

Scholarcy highlights

  • Addition of NO-Graphene quantum dots shows a 36.2% increase in the power conversion efficiency
  • The electrical properties of nitrogen- and oxygen-doped GQDs are investigated using them as the additive of hole-transporting materials in an optoelectronic device such as perovskite solar cells
  • Compared with PEDOT:PSS, a mixture of NO-GQDs and PEDOT:PSS shows a 36.2% increase in the power conversion efficiency and good device stability
  • It is believed that the improvement of photovoltaics is solely attributed from NO-GQDs which act as a positive role of faster hole transfer
  • We could confirm that the NO-GQDs facilitate hole-extraction from a photoactive layer and guarantee the more stable operation of PeSCs
  • We could confirm that the NO-Graphene quantum dots facilitate hole-extraction from a photoactive layer and guarantee the more stable operation of perovskite solar cells

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