Extended infrared response of silicon solar cells and the impurity photovoltaic effect

Sub-bandgap spectral response measurements on silicon solar cells are used to characterise the infrared response of present devices, and to investigate the impurity photovoltaic effect for improving their infrared response

M KEEVERS

2002

Scholarcy highlights

  • Sub-bandgap spectral response measurements on silicon solar cells are used to characterise the infrared response of present devices, and to investigate the impurity photovoltaic effect for improving their infrared response
  • Absorption coefficient values as low as 10−7 cm−1 have been determined, revealing structure due to 3- and 4-phonon assisted absorption. These values are compared with a more recent determination of the absorption edge based on photoluminescence measurements
  • Investigation of the IPV effect of indium in high efficiency bulk and thin film cells reveals that indium improves their infrared response
  • The cross section for electron photoemission from the indium level, a crucial parameter for modelling indium's impurity photovoltaic effect, is determined

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