Sensing in Ferroelectric Memories and Flip-Flops

We present a comparative description of the two technologies, highlighting the pros and cons of each and how different device structures yield significantly different sensing strategy

Ahmedullah Aziz

2018

Scholarcy highlights

  • Ferroelectric materials, by virtue of their polarization retention in the absence of the electric field, offer a unique method to introduce non-volatility in memories and logic
  • The exploration of FE materials in context of their application in compute and storage has been carried out in two forms: as capacitors, in which the FE material is sandwiched between two metal layers and in ferroelectric transistors, in which, FE is integrated into the gate stack of FETs
  • We present a comparative description of the two technologies, highlighting the pros and cons of each and how different device structures yield significantly different sensing strategy

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