Resistive Switching in Nanogap Systems on SiO2 Substrates

We demonstrate resistive switching phenomena in various nanogap systems on SiO2 substrate, made by different materials and means

Jun Yao

2009

Scholarcy highlights

  • Shown in Fig. 1a, an initial gap system is a pair of tungsten electrodes separated by ∼50 nanometers on a thermal-oxidized Si surface, defined by standard electron beam lithography and lift-off process
  • We demonstrate resistive switching phenomena in various nanogap systems on SiO2 substrate, made by different materials and means
  • Fig. 1d shows the two characteristic initiation of hysteretic current-voltage curves of the post-BD device: In a forward sweep, beginning with an OFF state, the device jumps to an ON state at ∼3.5 V and goes back to OFF at ∼5 V; in the backward sweep, it jumps from an OFF state to an ON state at ∼5 V and keeps the ON state below 5 V
  • The sudden current increase during the first sweep is accompanied by observable SiO2 substrate damage in the gap region
  • While the threshold BD voltage in α-C tends to be proportional to the electrode-electrode spacing, the writing/erasing voltages for switching tend to be independent of it, consistent with the local switching nature within the gap region
  • The corresponding scanning electron microscope image in Fig. 5e shows a dark dot at the gap region, indicating hole-like damage to the SiO2 substrate, which is inferred from the atomic force microscope image
  • The observed intermediate states reveal the filamentary conduction nature in post-BD SiO2 switching which is likely Si-Si wire formation, a further investigation of the individual filamentary path is needed

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